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SMD P channel transistors

SI2325DS-T1-E3

Description: Transistor: P-MOSFET; unipolar; -150V; -0.53A; Idm: -1.6A; 0.48W

Category: SMD P channel transistors

Manufacturer part number: SI2325DS-T1-E3

TME

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SI2325DS-T1-E3

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Poland

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Element14

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US Warehouse

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NA

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DigiKey

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Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -150V
Drain current -530mA
Pulsed drain current -1.6A
Power dissipation 0.48W
Case SOT23
Gate-source voltage ±20V
On-state resistance 1.2Ω
Mounting SMD
Gate charge 12nC
Kind of package reel
Kind of package tape
Kind of channel enhanced