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THT N channel transistors

NVHL020N090SC1

Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W

Category: THT N channel transistors

Manufacturer part number: NVHL020N090SC1

TME

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NVHL020N090SC1

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Poland

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NA

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0

Element14

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US Warehouse

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NA

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0

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US Warehouse

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0

DigiKey

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0

Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 900V
Drain current 83A
Pulsed drain current 472A
Power dissipation 251W
Case TO247-3
Gate-source voltage -10...19V
On-state resistance 28mΩ
Mounting THT
Gate charge 78nC
Kind of package tube
Kind of channel enhanced